No | Part number | Description ( Function ) | Manufacturers | |
1 | 9NM60-S | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 9NM60-S Preliminary 9.0A, 600V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 9NM60-S is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics. This power MOSFET is usually used at DC-DC, AC-DC |
Unisonic Technologies |
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Recommended search results related to 9NM60-S |
Part No | Description ( Function) | Manufacturers | |
9NM60 | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 9NM60 Preliminary Power MOSFET 9.0A, 600V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 9NM60 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-sta |
Unisonic Technologies |
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9NM60N | STD9NM60N STD9NM60N STF9NM60N, STP9NM60N N-channel 600 V, 0.63 Ω, 6.5 A TO-220, TO-220FP, DPAK MDmesh™ II Power MOSFET Features Order codes STD9NM60N STF9NM60N STP9NM60N VDSS (@Tjmax) RDS(on) max. 650 V < 0.745 Ω ID 6.5 A ■ 100% avalanche tested ■ Low input capacitance and g |
STMicroelectronics |
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STD9NM60 | N-channel Power MOSFET STP9NM60 STD9NM60 - STD9NM60-1 N-CHANNEL 600V - 0.55Ω - 8.3A TO-220/DPAK/IPAK Zener-Protected MDmesh™Power MOSFET TARGET DATA TYPE VDSS RDS(on) ID Pw STP9NM60 STD9NM60 STD9NM60-1 600 V 600 V 600 V < 0.60 Ω < 0.60 Ω < 0.60 Ω 8.3 A 8.3 A 8.3 A 100 W 100 W 100 W |
STMicroelectronics |
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STD9NM60-1 | N-channel Power MOSFET STP9NM60 STD9NM60 - STD9NM60-1 N-CHANNEL 600V - 0.55Ω - 8.3A TO-220/DPAK/IPAK Zener-Protected MDmesh™Power MOSFET TARGET DATA TYPE VDSS RDS(on) ID Pw STP9NM60 STD9NM60 STD9NM60-1 600 V 600 V 600 V < 0.60 Ω < 0.60 Ω < 0.60 Ω 8.3 A 8.3 A 8.3 A 100 W 100 W 100 W |
STMicroelectronics |
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STD9NM60N | N-channel Power MOSFET STD9NM60N STF9NM60N, STP9NM60N N-channel 600 V, 0.63 Ω, 6.5 A TO-220, TO-220FP, DPAK MDmesh™ II Power MOSFET Features Order codes STD9NM60N STF9NM60N STP9NM60N VDSS (@Tjmax) RDS(on) max. 650 V < 0.745 Ω ID 6.5 A ■ 100% avalanche tested ■ Low input capacitance and g |
STMicroelectronics |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |