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Datasheet 9N60 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 9N60 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
9N60
·FEATURES ·Drain Current –ID= 8.5A@ TC=25℃ ·Drain Source Voltage: VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.0Ω(Max) ·Avalanche Energy Specified ·Fast Switchi |  Inchange | mosfet |
9N6 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 9N60 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel Mosfet Transistor
isc Product Specification
9N60
·FEATURES ·Drain Current –ID= 8.5A@ TC=25℃ ·Drain Source Voltage: VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.0Ω(Max) ·Avalanche Energy Specified ·Fast Switchi Inchange mosfet | | |
| 2 | 9N65 | N-CHANNEL POWER MOSFET 9N65
UNISONIC TECHNOLOGIES CO., LTD
Preliminary
9A, 650V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 9N65 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and sup  Unisonic Technologies mosfet | | |
| 3 | 9N65 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
9N65
·DESCRIPTION ·Drain Current ID= 9A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 650V(Min) ·Fast Switching Speed
·APPLICATIONS ·General purpose power amplifier
·ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PAR  Inchange Semiconductor mosfet | | |
| 4 | 9N65K-MT | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD
9N65K-MT
Preliminary
9A, 650V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 9N65K-MT is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistan Unisonic Technologies mosfet | |
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