No | Part number | Description ( Function ) | Manufacturers | |
15 | 6N60 | N-CHANNEL MOSFET 6N60(F,B,H) 6A mps,600 Volts N-CHANNEL MOSFET FEATURE 6A,600V,RDS(ON)=1.2Ω@VGS=10V/3A Low gate charge Low Ciss Fast switching 100% avalanche tested Improved dv/dt capability TO-220AB 6N60 ITO-220AB 6N60F TO-263 6N60B TO-262 6N60H Absolute Maximum Ratings(TC=25℃,unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltag |
CHONGQING PINGYANG |
|
14 | 6N60 | 600V N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 6N60 6.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switchin |
Unisonic Technologies |
|
13 | 6N60 | N-Channel Power MOSFET / Transistor SEMICONDUCTOR 6N60 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET (6A, 600Volts) DESCRIPTION The Nell 6N60 is a three-terminal silicon device with current conduction capability of 6A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max. threshold voltage of 4 volts. They are designed for use in applications such as switche |
nELL |
|
12 | 6N60 | N-Channel Mosfet Transistor INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification 6N60 ·FEATURES ·Drain Current –ID= 6A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.2Ω(Max) ·Avalanche Energy Specified ·Fast Switching ·Simple Drive Requirements ·DESCRITION ·Designed for high efficiency switch mode power supply. |
INCHANGE |
|
11 | 6N60 | N-CHANNEL MOSFET 6N60 Power Mosfet 6.2 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The 6N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and ada |
ART CHIP |
|
10 | 6N60-C | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 6N60-C 6.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N60-C is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in swit |
Unisonic Technologies |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |