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60N60 PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
1 60N60
Ultra-low Vce(sat) Igbt

Ultra-Low VCE(sat) IGBT IXGN 60N60 VCES = 600 V IC25 = 100 A VCE(sat) = 1.7 V Preliminary data sheet E Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 W Clampe

IXYS Corporation
IXYS Corporation
pdf

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60N Data sheets

Part No Description ( Function) Manufacturers PDF
60N03   Power MOSFET

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 60N03 Power MOSFET 60 Amps,30Volts N-Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Typical Applications • Power Supplies

Tuofeng Semiconductor
Tuofeng Semiconductor
datasheet pdf
60N03   N-Ch 30V Fast Switching MOSFETs

CMD60N03/CMU60N03 N-Ch 30V Fast Switching MOSFETs General Description Product Summery The 60N03 is N-channel MOSFET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC con

Cmos
Cmos
datasheet pdf
60N03GP   AP60N03GP

AP60N03GS/P Pb Free Plating Product Advanced Power Electronics Corp. ▼ Low On-Resistance ▼ Fast Switching N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 30V 13.5mΩ 55A ▼ Simple Drive Requirement G S Description The Advanced Power MOSF

Advanced Power Electronics
Advanced Power Electronics
datasheet pdf



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