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60N60 PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
1 60N60
Ultra-low Vce(sat) Igbt

Ultra-Low VCE(sat) IGBT IXGN 60N60 VCES = 600 V IC25 = 100 A VCE(sat) = 1.7 V Preliminary data sheet E Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 W Clampe

IXYS Corporation
IXYS Corporation
pdf

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60N Data sheets

Part No Description ( Function) Manufacturers PDF
60N06   N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 60N06 60A, 60V N-CHANNEL POWER MOSFET „ DESCRIPTION Power MOSFET The U TC 60N06 is N-c hannel en hancement mod e po wer field effect transistors with stable off-stat e charact eristics, fast switching speed, lo w thermal resistance, usually used

Unisonic Technologies
Unisonic Technologies
datasheet pdf
60N10   N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 60N10 ·DESCRIPTION ·Drain Current ID= 40A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Fast Switching Speed ·APPLICATIONS ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(TC

Inchange Semiconductor
Inchange Semiconductor
datasheet pdf
60N20F   IXFH60N20F

Advance Technical Information HiPerRFTM Power MOSFET F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH60N20F IXFT60N20F VDSS ID25 RDS(on) trr = = ≤ ≤ 200V 60A 38mΩ 200ns TO-247 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS

IXYS
IXYS
datasheet pdf



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