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60N321 PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
1 60N321
GT60N321

GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321 High-Power Switching Applications Fourth Generation IGBT Unit: mm • FRD included between emitter and collector • Enhancement mode type • High speed IGBT : tf = 0.25 μs (typ.) (IC = 60 A) FRD : trr = 0.8 μs (typ.) (di/dt = −20 A/μs) • Low saturation voltage: VCE (sat) = 2.3 V (typ.

Toshiba Semiconductor
Toshiba Semiconductor
pdf

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60N3 Data sheets

Part No Description ( Function) Manufacturers PDF
60N3LH5   N-channel Power MOSFET

STD60N3LH5 STP60N3LH5, STU60N3LH5 N-channel 30 V, 0.0072 Ω, 48 A DPAK, IPAK, TO-220 STripFET™ V Power MOSFET Features Type STD60N3LH5 STP60N3LH5 STU60N3LH5 VDSS 30 V 30 V 30 V RDS(on) max 0.008 Ω 0.0084 Ω 0.0084 Ω ID 48 A 48 A 48 A ■ RDS(on) * Qg industry benchm

STMicroelectronics
STMicroelectronics
datasheet pdf
60N321   GT60N321

GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321 High-Power Switching Applications Fourth Generation IGBT Unit: mm • FRD included between emitter and collector • Enhancement mode type • High speed IGBT : tf = 0.25 μs (typ.) (IC = 60 A)

Toshiba Semiconductor
Toshiba Semiconductor
datasheet pdf



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