No | Part number | Description ( Function ) | Manufacturers | |
21 | 60N03 | Power MOSFET ( Transistor ) Shenzhen Tuofeng Semiconductor Technology Co., Ltd 60N03 Power MOSFET 60 Amps,30Volts N-Channel DPAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Typical Applications • Power Supplies • Converters • Power Motor Controls • Bridge Circuits MAXIMUM RATINGS (TJ = 25°C unless otherw |
Tuofeng Semiconductor |
|
20 | 60N03 | N-Channel Enhancement Mode Power MOSFET N-Channel Enhancement Mode Power MOSFET AF60N03 Features - Simple Drive Requirement - Low Gate Charge - Fast Switching - RoHS Compliant - Pb Free Plating Product Product Summary BVDSS (V) 30 RDS(ON) (mΩ) 12 ID (A) 45 General Description The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on- |
Anachip |
|
19 | 60N03 | N-Ch 30V Fast Switching MOSFETs CMD60N03/CMU60N03 N-Ch 30V Fast Switching MOSFETs General Description Product Summery The 60N03 is N-channel MOSFET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. Features BVDSS 30V RDSON 7m ID 60A Applications High Frequenc |
Cmos |
|
18 | 60N035 | N-Channel Field Effect Transistor Bay Linear Linear Excellence N-Channel Field Effect Transistor 60N035 Advance Information Description The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for low voltage applications such as automotive and other battery powered circuits where fast switching, low in-line power los |
ETC |
|
17 | 60N03GP | AP60N03GP AP60N03GS/P Pb Free Plating Product Advanced Power Electronics Corp. ▼ Low On-Resistance ▼ Fast Switching N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 30V 13.5mΩ 55A ▼ Simple Drive Requirement G S Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device de |
Advanced Power Electronics |
|
16 | 60N03L-10 | ST60N03L-10 STB60N03L-10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMIRARY DATA TYPE STB60N03L-10 s s s s s s s s V DSS 30 V R DS(on) < 0.01 Ω ID 60 A s s TYPICAL RDS(on) = 0.0085 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE HIGH CURRENT CAPABILITY 175 oC OPERATING TEMPERATURE APPLICATION OR |
STMicroelectronics |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |