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55N03LTA PDF Datasheet

The 55N03LTA is LogIC Level Fet. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

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No Part number Description ( Function ) Manufacturers PDF
1 55N03LTA
Logic Level FET

PHP/PHB/PHD55N03LTA TrenchMOS™ Logic Level FET Rev. 04 — 4 September 2002 Product data 1. Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™ technology. Product availability: PHP55N03LTA in a SOT78 (TO-220AB) PHB55N03LTA in a SOT404 (D2-PAK) PHD55N03LTA in a SOT428 (D-PAK). 2. Features s Low on-state resistance s Fast

Philips
Philips
pdf

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Recommended search results related to 55N03LTA

Part No Description ( Function) Manufacturers PDF
55N03LT   PHB55N03LT

Philips Semiconductors Product specification N-channel TrenchMOS™ transistor Logic level FET FEATURES • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance • Logic level compatible PHP55N03LT, PHB55N

NXP Semiconductors
NXP Semiconductors
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EMB55N03J   Field Effect Transistor

    N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  30V  D RDSON (MAX.)  55mΩ  ID  3.5A  G    S Pb‐Free Lead Plating & Halogen Free    ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwi

Excelliance MOS
Excelliance MOS
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GJ55N03   N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Pb Free Plating Product ISSUED DATE :2006/08/16 REVISED DATE : GJ55N03 N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 25V 6m 55A The GJ55N03 provide the designer with the best combination of fast switching, ruggedized device design, low on-resis

GTM
GTM
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HRLD55N03K   N-Channel MOSFET

HRLD55N03K_HRLU55N03K HRLD55N03K / HRLU55N03K 30V N-Channel Trench MOSFET FEATURES  Originative New Design  Superior Avalanche Rugged Technology  Excellent Switching Characteristics  Unrivalled Gate Charge : 50nC (Typ.)  Extended Safe Operating Area  Lower RDS(

SemiHow
SemiHow
datasheet pdf
HRLF55N03K   N-Channel MOSFET

HRLF55N03K Jan 2016 HRLF55N03K 30V N-Channel Trench MOSFET FEATURES ‰ BVDSS = 30 V ‰ ID = 65 A ‰ Unrivalled Gate Charge : 50 nC (Typ.) ‰ Lower RDS(ON) : 4.2 Pȍ (Typ.) @VGS=10V ‰ Lower RDS(ON) : 7.5 Pȍ (Typ.) @VGS=4.5V ‰ 100% Avalanche Tested 8DFN 5x6 1 Absolute Maximu

SemiHow
SemiHow
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