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Datasheet 50N60 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | 50N60 | IXRH50N60 Advanced Technical Information
IGBT with Reverse Blocking capability
IXRH 50N80 IXRH 50N60
VCES = 600 / 800V IC25 = 60 A VCE(sat) = 2.5 V tf = 75 ns
TO-247 AD
G C E
C G
C (TAB) C = Collector, TAB = Collector
E G = Gate, E = Emitter,
IGBT Symbol VCES VGES IC25 IC90 ICM VCEK Ptot TC = 25°C TC | IXYS | data |
2 | 50N60T | IKW50N60T TrenchStop® Series
IKW50N60T q
Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode
C
Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit | Infineon | data |
50N Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | 50N02-09 | SUB50N02-09 SUD50N02-09P
Vishay Siliconix
N-Channel 20-V (D-S) 175_C MOSFET
FEATURES PRODUCT SUMMARY
VDS (V)
20
rDS(on) (W)
0.0095 @ VGS = 10 V 0.017 @ VGS = 4.5 V
ID (A)a
20 15
D D D D
TrenchFETr Power MOSFET 175_C Junction Temperature PWM Optimized for High Efficiency 100% Rg Tested
APPLICATIONS
D High- Vishay Siliconix data | | |
2 | 50N024 | SUD50N024
SUD50N024-06P
New Product
Vishay Siliconix
N-Channel 22-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
VDS (V)
24C
FEATURES
ID (A)d
80 64
rDS(on) (W)
0.006 @ VGS = 10 V 0.0095 @ VGS = 4.5 V
D TrenchFETr Power MOSFET D 175_C Junction Temperature D PWM Optimized for High Efficiency
AP Vishay Siliconix data | | |
3 | 50N02409PU54A | SU50N02409PU54A
SUD50N024-06P
New Product
Vishay Siliconix
N-Channel 22-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
VDS (V)
24C
FEATURES
ID (A)d
80 64
rDS(on) (W)
0.006 @ VGS = 10 V 0.0095 @ VGS = 4.5 V
D TrenchFETr Power MOSFET D 175_C Junction Temperature D PWM Optimized for Vishay Intertechnology data | | |
4 | 50N025-05P | SUD50N025-05P New Product
SUD50N025-05P
Vishay Siliconix
N-Channel 25-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
25 0.0052 @ VGS = 10 V 0.0076 @ VGS = 4.5 V
ID (A)a, e
89 80
Qg (Typ)
30 nC
TO-252
FEATURES D TrenchFETr Power MOSFET D 100% Rg Tested D RoHS Compliant
APPLICATIONS D DC/DC Conversion Vishay Siliconix data | | |
5 | 50N03 | Power Transistor Shenzhen Tuofeng Semiconductor Technology Co., Ltd
50N03
Power-Transistor
Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC for target applications • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) � Tuofeng transistor | | |
6 | 50N03 | N-CHANNEL MOSFET KIA
SEMICONDUCTORS
50 Amps, 30 Volts N-CHANNEL MOSFET
1.Features
Advanced trench process technology High density cell design for ultra low on-resistance Fully characterized avalanche voltage and current
2.Applications
VDSS=30V,RDS(on)=6.5mΩ,ID=50A Vds=30V RDS(ON)=6.5mΩ(M KIA mosfet | | |
7 | 50N035 | N-Channel Field Effect Transistor
Bay Linear
Linear Excellence
N-Channel Field Effect Transistor
50N035
Description
The Bay Linear n-channel power field effect transistors are produced using high cell density DMOS technology , These devices are particularly suited for low voltage applications such as automoti Bay Linear transistor | |
Esta página es del resultado de búsqueda del 50N60. Si pulsa el resultado de búsqueda de 50N60 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
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