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50N60 PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
2 50N60
IXRH50N60

Advanced Technical Information IGBT with Reverse Blocking capability IXRH 50N80 IXRH 50N60 VCES = 600 / 800V IC25 = 60 A VCE(sat) = 2.5 V tf = 75 ns TO-247 AD G C E C G C (TAB) C = Collector, TAB = Collector E G = Gate, E = Emitter, IGBT Symbol VCES VGES IC25 IC90 ICM VCEK Ptot TC = 25°C TC = 90°C VGE = 0/15 V; RG = 22 Ω; TVJ = 125°C RBSOA, Clamped inductive load; L

IXYS
IXYS
pdf
1 50N60T
IKW50N60T

TrenchStop® Series IKW50N60T q Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode      C        Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time – 5s Designed for : - Frequency Converters - Uninterrupted P

Infineon
Infineon
pdf



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