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50N06 Datasheet PDF Search Results

No Part number Description ( Function ) Manufacturers PDF
10 50N06
Power-Transistor

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 50N06 Power-Transistor Features • For fast switching converters and sync. rectification • N-channel enhancement - normal level • 175 °C operating temperature • Avalanche rated • Pb-free lead plating, RoHS compliant Product Summary V DS R DS(on),max SMDversion ID 60 V 15 mΩ 50 A Type 50N06 50N06 2 Package Marking 1 3 TO-251 50N06 1 23 TO-252 50N06 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D TC =25 °C1) Pulsed drain current I D,pulse T C=25 °C2) Avalanche energy, single pulse E AS I D=50 A, R GS=25 Ω Reverse diode dv

Tuofeng Semiconductor - 50N06 pdf datasheet
Tuofeng Semiconductor
50N06 datasheet pdf
9 50N06
N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 50N06 50 Amps, 60 Volts N-CHANNEL POWER MOSFET 1 MOSFET DESCRIPTION The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. It is mainly suitable electronic ballast, and low power switching mode power appliances. TO-220 1 TO-220F FEATURES * RDS(ON) = 23mΩ@VGS = 10 V * Ultra low gate charge ( typical 30 nC ) * Low reverse transfer Capacitance ( CRSS = typical 80 pF ) * Fast switching capability * 100% avalanche energy specified * Improved dv/dt capability *Pb

UTC - 50N06 pdf datasheet
UTC
50N06 datasheet pdf
8 50N06
N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 50N06 ·DESCRIPTION ·Drain Current ID= 50A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Fast Switching Speed ·APPLICATIONS ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 60 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 50 A Ptot Total Dissipation@TC=25℃ 150 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Rth j-a Thermal Resistance, Junction to Case

Inchange Semiconductor - 50N06 pdf datasheet
Inchange Semiconductor
50N06 datasheet pdf
7 50N06
N-CHANNEL MOSFET

50N06(F,B,H) 50A mps,60 Volts N-CHANNEL MOSFET FEATURE  50A,60V,RDS(ON)=16mΩ@VGS=10V/25A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability TO-220AB 50N06 ITO-220AB 50N06F TO-263 50N06B TO-262 50N06H Absolute Maximum Ratings(TC=25℃,unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(Note1) Single Pulse Avalanche Energy (Note 2) Avalanche Current(Note1) Repetitive Avalanche Energy (Note1) Reverse Diode dV/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8"from cas

CHONGQING PINGYANG - 50N06 pdf datasheet
CHONGQING PINGYANG
50N06 datasheet pdf
6 50N06
N-CHANNEL MOSFET

KIA 50 Amps, 60 Volts N-CHANNEL MOSFET 销售电话:13641469108廖先生 QQ:543158798 50N06 SEMICONDUCTORS 1.Description The KIA50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. It is mainly suitable electronic ballast, and low power switching 2. Features RDS(ON)=23mΩ@VGS=10V. Ultra low gate charge (typical 30nC) Low reverse transfer capacitance Fast switching capability 100% avalanche energy specified Improved dv/dt capability 3. Pin configuration Pin 1 2 3 Function Gate Drain Source 1 of 9 Free Datash

KIA - 50N06 pdf datasheet
KIA
50N06 datasheet pdf
5 50N06
Low voltage high current power MOS FET

50N06 * '6 72 Available RoHS* COMPLIANT ' * 6 VDS ID VGS PD TJ Tstg EAS 52.4 Ciss Coss Crss VDS=2v, V GS=0V,f=1.0MHZ VDS=2v,V GS=0V,f=1.0MHZ VDS=2v,V GS=0V,f=1.0MHZ 特性参数值(TC=25ºC) 参数说明 漏源反向电压 漏源截止电流 栅源截止电流 通态电阻 栅源极开启电压 跨导 符号 BVDSS IDSS IGSS(F/R) RDS(ON) VGS(th) gFS 测试条件 VGS=0V, ID=250uA VDS=60v,VGS=0V VGS=±20V,VDS=0V VGS=10V,ID=26.2A VGS=5V,ID=26.2A VDS=VGS,ID=250µA ID=26.2A,VDS=25V 最小值 60 --- -- 2.0 -- 典型值 ---- 0.017 0.020 20 最大值 -- 1 ±100 0.021 0.025 4.0 -- 单位 V µA nA Ω V S 动态特性 参数说明 栅极电荷 栅源电荷

ETC - 50N06 pdf datasheet
ETC
50N06 datasheet pdf


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