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50N06 PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
10 50N06
Power-Transistor

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 50N06 Power-Transistor Features • For fast switching converters and sync. rectification • N-channel enhancement - normal level • 175 °C operating temperature • Avalanche rated • Pb-free lead plating, RoHS compliant Product Summary V DS R DS(on),max SMDversion ID 60 V 15 mΩ 50 A Type 50N06 50N06 2 Package Ma

Tuofeng Semiconductor
Tuofeng Semiconductor
pdf
9 50N06
N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 50N06 50 Amps, 60 Volts N-CHANNEL POWER MOSFET 1 MOSFET DESCRIPTION The UTC 50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. It is mainly suitable electronic ballast, and low power switching

UTC
UTC
pdf
8 50N06
N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 50N06 ·DESCRIPTION ·Drain Current ID= 50A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Fast Switching Speed ·APPLICATIONS ·General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 60 V VGS Gate-Source Volt

Inchange Semiconductor
Inchange Semiconductor
pdf
7 50N06
N-CHANNEL MOSFET

50N06(F,B,H) 50A mps,60 Volts N-CHANNEL MOSFET FEATURE  50A,60V,RDS(ON)=16mΩ@VGS=10V/25A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability TO-220AB 50N06 ITO-220AB 50N06F TO-263 50N06B TO-262 50N06H Absolute Maximum Ratings(TC=25℃,unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source

CHONGQING PINGYANG
CHONGQING PINGYANG
pdf
6 50N06
N-CHANNEL MOSFET

KIA 50 Amps, 60 Volts N-CHANNEL MOSFET 销售电话:13641469108廖先生 QQ:543158798 50N06 SEMICONDUCTORS 1.Description The KIA50N06 is three-terminal silicon device with current conduction capability of about 50A, fast switching speed. Low on-state resistance, breakdown voltage rating of 60V, and max threshold voltages of 4 volt. It is mainly suitable electronic ballast

KIA
KIA
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5 50N06
Low voltage high current power MOS FET

50N06 * '6 72 Available RoHS* COMPLIANT ' * 6 VDS ID VGS PD TJ Tstg EAS 52.4 Ciss Coss Crss VDS=2v, V GS=0V,f=1.0MHZ VDS=2v,V GS=0V,f=1.0MHZ VDS=2v,V GS=0V,f=1.0MHZ 特性参数值(TC=25ºC) 参数说明 漏源反向电压 漏源截止电流 栅源截止电流 通态电阻 栅源极开启电压 跨导 符号 BVDSS IDSS IGSS(F/R) RDS(ON) VGS(th) gFS 测试条

ETC
ETC
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