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Datasheet 50N0 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
19 | 50N02-09 | SUB50N02-09 SUD50N02-09P
Vishay Siliconix
N-Channel 20-V (D-S) 175_C MOSFET
FEATURES PRODUCT SUMMARY
VDS (V)
20
rDS(on) (W)
0.0095 @ VGS = 10 V 0.017 @ VGS = 4.5 V
ID (A)a
20 15
D D D D
TrenchFETr Power MOSFET 175_C Junction Temperature PWM Optimized for High Efficiency 100% Rg Tested
APPLICATIONS
D High- |
Vishay Siliconix |
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18 | 50N024 | SUD50N024
SUD50N024-06P
New Product
Vishay Siliconix
N-Channel 22-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
VDS (V)
24C
FEATURES
ID (A)d
80 64
rDS(on) (W)
0.006 @ VGS = 10 V 0.0095 @ VGS = 4.5 V
D TrenchFETr Power MOSFET D 175_C Junction Temperature D PWM Optimized for High Efficiency
AP |
Vishay Siliconix |
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17 | 50N02409PU54A | SU50N02409PU54A
SUD50N024-06P
New Product
Vishay Siliconix
N-Channel 22-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
VDS (V)
24C
FEATURES
ID (A)d
80 64
rDS(on) (W)
0.006 @ VGS = 10 V 0.0095 @ VGS = 4.5 V
D TrenchFETr Power MOSFET D 175_C Junction Temperature D PWM Optimized for |
Vishay Intertechnology |
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16 | 50N025-05P | SUD50N025-05P New Product
SUD50N025-05P
Vishay Siliconix
N-Channel 25-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
25 0.0052 @ VGS = 10 V 0.0076 @ VGS = 4.5 V
ID (A)a, e
89 80
Qg (Typ)
30 nC
TO-252
FEATURES D TrenchFETr Power MOSFET D 100% Rg Tested D RoHS Compliant
APPLICATIONS D DC/DC Conversion |
Vishay Siliconix |
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Número de pieza | Descripción | Fabricantes | |
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