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Datasheet 4N60B Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | 4N60B | N-Chanel Power MOSFET N-Chanel Power MOSFET
ANA4N60B, ANP4N60B, ANB4N60B, AND4N60B, ANI4N60B, ANU4N60B Rdson=2,2 , Vds=600 V, Qg(tot)=12 nC Applications
SMPS PFC
Features
Low Qg Low Rdson RoHS compliant
1 Gate 2 Drain 3 Source
Table 1. Device summary
Part numbers ANA4N60B ANP4N60B ANB4N60B AND4N6 | angstrem | mosfet |
2 | 4N60B | 600V N-Channel MOSFET SSP4N60B/SSS4N60B
SSP4N60B/SSS4N60B
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, | Fairchild Semiconductor | mosfet |
3 | 4N60B | N-channel I-PAK/D-PAK/TO-220F MOSFET SAMWIN
TO-251 TO-252 TO-220F
SW4N60B
N-channel I-PAK/D-PAK/TO-220F MOSFET
BVDSS : 600V ID
1
Features
■ High ruggedness ■ RDS(ON) (Max 2.5 Ω)@VGS=10V ■ Gate Charge (Typ 11nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested
: 4A
RDS(ON) : 2.5Ω
2 1 3 2 3 1 2 2 3 1 3
1. Gate 2. Dr | SEMIPOWER | mosfet |
4N6 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | 4N60 | N-CHANNEL MOSFET KIA
SEMICONDUCTORS
600V N-CHANNEL MOSFET
4N60
1.Description
The KIA4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually use KIA mosfet | | |
2 | 4N60 | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD 4N60
4 Amps, 600 Volts N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This Unisonic Technologies mosfet | | |
3 | 4N60 | 600Volts N-Channel MOSFET www.DataSheet4U.net
4N60
4 Amps,600Volts N-Channel MOSFET
■ Description
The ET4N60 N-Channel enhancement mode silicon gate designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. power MOSFET Estek Electronics mosfet | | |
4 | 4N60 | N-Channel Power MOSFET, Transistor SEMICONDUCTOR
4N60 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET (4A, 600Volts)
DESCRIPTION
The Nell 4N60 is a three-terminal silicon device with current conduction capability of 4A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max. thresho nELL mosfet | | |
5 | 4N60 | 600V N-Channel MOSFET 600V N-Channel MOSFET GENERAL DESCRIPTION
This Power MOSFET is produced using advanced planar stripe DMOS technology. This latest technology has been especially designed to minimize on-state resistance, Have a high rugged avalanche characteristics.These devices are well suited for high efficiency sw GFD mosfet | | |
6 | 4N60 | Surface Mount N-Channel Power MOSFET 4N60
Surface Mount N-Channel Power MOSFET
P b Lead(Pb)-Free
Description:
The WEITRON 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOS WEITRON mosfet | | |
7 | 4N60 | N-Channel Mosfet Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
4N60
DESCRIPTION ·Drain Current ID= 4A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 600V(Min) ·Fast Switching Speed
APPLICATIONS ·General purpose power amplifier
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER INCHANGE mosfet | |
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