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4N60B PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
3 4N60B
N-channel I-PAK/D-PAK/TO-220F MOSFET

SAMWIN TO-251 TO-252 TO-220F SW4N60B N-channel I-PAK/D-PAK/TO-220F MOSFET BVDSS : 600V ID 1 Features ■ High ruggedness ■ RDS(ON) (Max 2.5 Ω)@VGS=10V ■ Gate Charge (Typ 11nC) ■ Improved dv/dt Capability ■ 100% Avalanche Tested : 4A RDS(ON) : 2.5Ω 2 1 3 2 3 1 2 2 3 1 3 1. Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced V

SEMIPOWER
SEMIPOWER
pdf
2 4N60B
N-Chanel Power MOSFET

N-Chanel Power MOSFET ANA4N60B, ANP4N60B, ANB4N60B, AND4N60B, ANI4N60B, ANU4N60B Rdson=2,2 , Vds=600 V, Qg(tot)=12 nC Applications      SMPS PFC Features Low Qg Low Rdson RoHS compliant 1 Gate 2 Drain 3 Source Table 1. Device summary Part numbers ANA4N60B ANP4N60B ANB4N60B AND4N60B ANI4N60B ANU4N60B Marking A4N60B P4N60B B4N60B D4N60B I4N60B U4N60B Package T

angstrem
angstrem
pdf
1 4N60B
600V N-Channel MOSFET

SSP4N60B/SSS4N60B SSP4N60B/SSS4N60B 600V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the

Fairchild Semiconductor
Fairchild Semiconductor
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