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4N6 PDF Datasheet

The 4N6 is . It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

Searched Lists

No Part number Description ( Function ) Manufacturers PDF
49 4N60
N-CHANNEL MOSFET

KIA SEMICONDUCTORS 600V N-CHANNEL MOSFET 4N60 1.Description The KIA4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, hi

KIA
KIA
pdf
48 4N60
N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 4N60 4 Amps, 600 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power suppl

Unisonic Technologies
Unisonic Technologies
pdf
47 4N60
600Volts N-Channel MOSFET

4N60 4 Amps,600Volts N-Channel MOSFET ■ Description The ET4N60 N-Channel enhancement mode silicon gate designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. power MOSFET is ■ Features RDS(ON) =2.50Ω@VGS = 10 V Low gate charge ( typical 16nC) Hi

Estek Electronics
Estek Electronics
pdf
46 4N60
N-Channel Power MOSFET / Transistor

SEMICONDUCTOR 4N60 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET (4A, 600Volts) DESCRIPTION The Nell 4N60 is a three-terminal silicon device with current conduction capability of 4A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max. threshold voltage of 4 volts. They are designed for use in applications such as switche

nELL
nELL
pdf
45 4N60
600V N-Channel MOSFET

600V N-Channel MOSFET GENERAL DESCRIPTION This Power MOSFET is produced using advanced planar stripe DMOS technology. This latest technology has been especially designed to minimize on-state resistance, Have a high rugged avalanche characteristics.These devices are well suited for high efficiency switched mode power supplies, active power factor correction.electronic lamp balla

GFD
GFD
pdf
44 4N60
Surface Mount N-Channel Power MOSFET

4N60 Surface Mount N-Channel Power MOSFET P b Lead(Pb)-Free Description: The WEITRON 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM

WEITRON
WEITRON
pdf

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List of most widely used semiconductors

Part Number Function Manufacturers PDF
1N4007

The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V.

Vishay Semiconductor
Vishay
pdf
LM317

This is a popular adjustable voltage regulator.
( 1.2V to 37V)

On Semiconductor
ON Semiconductor
pdf

 6N137  |   LM393   |   2N3906    |   2N2222   |   TIP120   |

   1N5818   |   LM324N    |   A1015   |   SMAJ20CA  


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