MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 4N35/D GlobalOptoisolator™ 6-Pin DIP Optoisolators Transistor Output The 4N35, 4N36 and 4N37 devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. • Current Transfer Ratio — 100% Minimum @ Specified Conditions • Guaranteed Switchin

Photocoupler Product Data Sheet 4N35/ 4N37 (M, S, S-TA1) Spec No.: DS-70-99-0012 Effective Date: 12/13/2011 Revision: C LITE-ON DCC RELEASE BNS-OD-FC001/A4 LITE-ON Technology Corp. / Optoelectronics No.90,Chien 1 Road, Chung Ho, New Taipei City 23585, Taiwan, R.O.C. Tel: 886-2-2222-6181 Fax: 886-2-2221-1948 / 886-2-2221-0660 http://www.liteon.com/opto LITE-ON TECHNOLOGY CORPOR

4N35,4N36,4N37(Short) TOSHIBA Photocoupler GaAs IRed & Photo−Transistor 4N35(Short), 4N36(Short), 4N37(Short) AC Line / Digital Logic Isolator. Digital Logic / Digital Logic Isolator. Telephone Line Receiver. High Frequency Power Supply Feedback Control. Relay Contact Monitor. The TOSHIBA 4N35 (short) through 4N37 (short) consists of a gallium arsenide infrared emitting diod

4N35, 4N36, 4N37 Vishay Semiconductors Optocoupler, Phototransistor Output, with Base Connection A1 C2 NC 3 6B 5C 4E 21842 i179004-5 DESCRIPTION Each optocoupler consists of gallium arsenide infrared LED and a silicon NPN phototransistor. AGENCY APPROVALS • Underwriters laboratory file no. E52744 • BSI: EN 60065:2002, EN 60950:2000 • FIMKO; EN 60065, EN 60335, EN 6095