| No | Part number | Description ( Function ) | Manufacturers | |
| 6 | 4953 | Dual 30V P-Channel PowerTrench MOSFET Shenzhen Tuofeng Semiconductor Technology 4Co9.,5L3td 4953 Dual 30V P-Channel PowerTrench® MOSFET General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). Applications • Power man |
 Tuofeng Semiconductor |
|
| 5 | 4953A | Dual 30V P-Channel PowerTrench MOSFET Shenzhen Tuofeng Semiconductor Technology 4Co9.,5L3tdA 4953A Dual 30V P-Channel PowerTrench® MOSFET General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). Applications • Power m |
Tuofeng Semiconductor |
|
| 4 | 4953B | Dual 20V P-Channel PowerTrench MOSFET Shenzhen Tuofeng Semiconductor Technology 4Co9.,5L3tdB 4953B Dual 20V P-Channel PowerTrench® MOSFET General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings . Applications • Power management • |
Tuofeng Semiconductor |
|
| 3 | 4953GM | AP4953GM AP4953GM RoHS-compliant Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Low Gate Charge ▼ Fast Switching D1 G2 S2 D2 D1 D2 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 53mΩ -5A SO-8 S1 G1 Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, rugged |
 Advanced Power Electronics |
|
| 2 | 4957AGM | AP4957AGM AP4957AGM RoHS-compliant Product Advanced Power Electronics Corp. ▼ Low On-Resistance ▼ Simple Drive Requirement D1 D2 D1 D2 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID G2 S2 -30V 26mΩ -7.4A ▼ Dual P MOSFET Package SO-8 S1 G1 Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device |
Advanced Power Electronics |
|
| 1 | 495PT | Phase Control Thyristors SEMICONDUCTOR 42.0(1.65)DIA. MAX. l B TYPE 20 3.5(0.138) DIA. 25.0(0.98) DIA. Max. 15.01(0.59) Max. All dimensions in millimeters ( inches ) SEMICONDUCTOR 495PT Series RRooHHSS www.nellsemi.com Page 2 of 3 SEMICONDUCTOR 495PT Series RRooHHSS 31.25 2.5 μ ， www.nellsemi.com Page 3 of 3 |
 nELL |
|
List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
|
| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
|
| 6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA | |||