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495 PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
6 4953
Dual 30V P-Channel PowerTrench MOSFET

Shenzhen Tuofeng Semiconductor Technology 4Co9.,5L3td 4953 Dual 30V P-Channel PowerTrench® MOSFET General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). Applications • Power man

Tuofeng Semiconductor
Tuofeng Semiconductor
pdf
5 4953A
Dual 30V P-Channel PowerTrench MOSFET

Shenzhen Tuofeng Semiconductor Technology 4Co9.,5L3tdA 4953A Dual 30V P-Channel PowerTrench® MOSFET General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V – 25V). Applications • Power m

Tuofeng Semiconductor
Tuofeng Semiconductor
pdf
4 4953B
Dual 20V P-Channel PowerTrench MOSFET

Shenzhen Tuofeng Semiconductor Technology 4Co9.,5L3tdB 4953B Dual 20V P-Channel PowerTrench® MOSFET General Description This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings . Applications • Power management •

Tuofeng Semiconductor
Tuofeng Semiconductor
pdf
3 4953GM
AP4953GM

AP4953GM RoHS-compliant Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Low Gate Charge ▼ Fast Switching D1 G2 S2 D2 D1 D2 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -30V 53mΩ -5A SO-8 S1 G1 Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, rugged

Advanced Power Electronics
Advanced Power Electronics
pdf
2 4957AGM
AP4957AGM

AP4957AGM RoHS-compliant Product Advanced Power Electronics Corp. ▼ Low On-Resistance ▼ Simple Drive Requirement D1 D2 D1 D2 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID G2 S2 -30V 26mΩ -7.4A ▼ Dual P MOSFET Package SO-8 S1 G1 Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device

Advanced Power Electronics
Advanced Power Electronics
pdf
1 495PT
Phase Control Thyristors

SEMICONDUCTOR 42.0(1.65)DIA. MAX. l B TYPE 20 3.5(0.138) DIA. 25.0(0.98) DIA. Max. 15.01(0.59) Max. All dimensions in millimeters ( inches ) SEMICONDUCTOR 495PT Series RRooHHSS www.nellsemi.com Page 2 of 3 SEMICONDUCTOR 495PT Series RRooHHSS 31.25 2.5 μ , www.nellsemi.com Page 3 of 3

nELL
nELL
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