Philips Semiconductors TrenchMOS™ transistor Logic level FET Product specification PHP45N03LT FEATURES • ’Trench’ technology • Very low on-state resistance • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance SYMBOL g d s QUICK REFERENCE DATA VDSS = 30 V ID = 45 A RDS(ON) ≤ 24 mΩ (VGS = 5 V) R

NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P45N03LTG TO-220 Lead Free D PRODUCT SUMMARY V(BR)DSS 25 RDS(ON) 20m ID 45A G S 1. GATE 2. DRAIN 3. SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current