| No | Part number | Description ( Function ) | Manufacturers | |
| 1 | 3N142 | SILICON INSULATED GATE FIELD EFFECT TRANSISTOR |
 ETC |
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Search Result Starting with '3N1' |
| Part No | Description ( Function) | Manufacturers | |
| 3N173 | Diode Protected P-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch Diode Protected P-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch 3N172 / 3N173 FEATURES CORPORATION • High Input Impedance • Diode Protected Gate PIN CONFIGURATION ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise specified) Drain-Source or Drain-Gate |
 Calogic LLC |
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| 3N163 | High Speed Switch 3N163 P-CHANNEL MOSFET The 3N163 is an enhancement mode P-Channel Mosfet The 3N163 is an enhancement mode P-Channel Mosfet designed for use as a General Purpose amplifier or switch The hermetically sealed TO-72 package is well suited for high reliability and harsh environment ap |
 Micross |
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| 3N163 | P-CHANNEL ENHANCEMENT MODE 3N163, 3N164 P-CHANNEL ENHANCEMENT MODE Linear Integrated Systems MOSFET FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE FAST SWITCHING LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS (NOTE 1) @ 25°C (unless otherwise noted) Drain-Source or Drain-Gate Voltag |
 Linear Integrated Systems |
|
List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
|
| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
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| 6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA | |||