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Datasheet 3N1 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 83 | 3N100E | MTB3N100E MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTB3N100E/D
Designer's
TMOS E-FET .™ High Energy Power FET D 2 PAK for Surface Mount N–Channel Enhancement–Mode Silicon Gate
The D2PAK package has the capability of housing a larger die than any existing surface mount package whi |
 Motorola Semiconductors |
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| 82 | 3N121 | Trans MOSFET N-CH 20V 0.05A Rail |
 New Jersey Semiconductor |
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| 81 | 3N123 | Trans MOSFET N-CH 20V 0.05A Rail |
New Jersey Semiconductor |
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| 80 | 3N128 | MOSFET AMPLIFIER MAXIMUM RATINGS
Rating Drain-Source Voltage
Drain-Gate Voltage Gate-Source Voltage
Drain Current
@Total Device Dissipation T/^ = 25°C
Derate above 25°C Operating and Storage Junction
Temperature Range
Symbol vDs vDg vgs
id
Pd
Tj, Tstg
Value + 20 + 20 ±10 50 330 2.2
-65 to +175
Unit
Vdc Vdc Vdc |
Motorola Semiconductors |
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