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3DD13009 PDF Datasheet

The 3DD13009 is NPN Transistor, SilICon NPN Triple Diffusion Type Bipolar Transistor. It also consolidates and displays results from multiple manufacturers with the same part number and similar functionality.




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Searched parts can be used interchangeably as substitutes for one another, But it's important to note that the parameters for each manufacturer may vary slightly.

Searched Lists

No Part number Description ( Function ) Manufacturers PDF
12 3DD13009
NPN Transistor

3DD13009(NPN) TO-220 Transistor 1. BASE TO-220 2. COLLECTOR Features 3 2 1 — power switching applications 3. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage

LGE
LGE
pdf
11 3DD13009
Silicon NPN triple diffusion type bipolar transistor

1 3DD13009 NPN 3DD13009 2 2.1 2.2 TO-220F Tamb= 25 - Ta=25 Tc=25 VCE0 VCB0 VEB0 IC Ptot Tj Tstg 400 700 9 12 2 100 150 -55 150 V V V A W Tamb= 25 10.4max 3.2 2.7max 4.8max 2.7 15.5max 1.2 0.6 2.54 2.54 BCE 12.7min 2.3 0.6 - ICB0 VCB=700V, IE=0 - IEB0 VEB=9V, IC=0 0.1 mA 0.1 mA hFEa VCE=5V, IC=3A 8 40 hFE1 hFE2 - - hFE1/ hFE2 VCE a sat VBE a sat hFE1

ETC
ETC
pdf
10 3DD13009
NPN Transistor

Dayan Technology Industry Co., Ltd. Shenzhen 1. NPN 3DD13009 2. TO-220 3. 4. Ta=25 VCBO VCEO VEBO IC T a=25 PC T c=25 Tj Tstg 5 Ta=25 700 400 9 12 3.0 100 150 -55~150 V V V A W W B VCBO B VCEO B VEBO ICBO ICEO IEBO VCE sat VBEsat hFE tf ts fT Mi Ma nx IC= 1mA IE=0 700 V IC= 10 mA IB=0 400 V IE=1mA IC=0 VCB= 680 V IE=0 9 5 V µA VCE=390V IB=0 5 µA

Dayan Technology
Dayan Technology
pdf
9 3DD13009-A9
Silicon NPN triple diffusion type bipolar transistor

产品概述 3DD13009 A9 是硅 NPN 型功率开关晶体管,该产品 采用平面工艺,分压环终端 结构和少子寿命控制技术, 提高了产品的击穿电压、开 关速度和可靠性。 硅三重扩散 NPN 双极型晶体管 3DD13009 A9 ○R 产品特点 ● 开关损耗低 ● 反向漏电流小 ● 高温特性好 ● 反向击穿电压高 ● 可靠

ETC
ETC
pdf
8 3DD13009A8
Silicon NPN Transistor

产品概述 3DD13009 A8 是硅 NPN 型功率开关晶体管,该产品 采用平面工艺,分压环终端 结构和少子寿命控制技术, 提高了产品的击穿电压、开 关速度和可靠性。 硅三重扩散 NPN 双极型晶体管 3DD13009 A8 ○R 产品特点 ● 开关损耗低 ● 反向漏电流小 ● 高温特性好 ● 反向击穿电压高 ● 可靠

Huajing Microelectronics
Huajing Microelectronics
pdf
7 3DD13009AN
Silicon NPN Transistor

产品概述 3DD13009 AN 是硅 NPN 型功率开关晶体管,该产品 采用平面工艺,分压环终端 结构和少子寿命控制技术, 提高了产品的击穿电压、开 关速度和可靠性。 硅三重扩散 NPN 双极型晶体管 3DD13009 AN ○R 产品特点 ● 开关损耗低 ● 反向漏电流小 ● 高温特性好 ● 反向击穿电压高 ● 可靠

Huajing Microelectronics
Huajing Microelectronics
pdf

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