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Datasheet 3DA5109 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 3DA5109 | NPN Transistor 1
3DA4002(3DA5109) NPN
3DA4002(3DA5109)
2
2.1
2.2
B4(A3-02B)
8.64 9.39
12.5 25.0 6.10 6.60
Tamb= 25
-
Ta=25 Tc=25
VCE0 VCB0 VEB0
IC
Ptot
Tj Tstg
50 65 5 0.4 1.0 3.5 150 -55 150
V V V A
W
Tamb= 25
45
8.01 8.50 EBC
- ICB0 VCB=40V IE=0 0.1 mA
- IEB0 VEB=4V IC=0
0.1 mA
hFE VCE=10V IC=10 |  Huajing Microelectronics | transistor |
3DA Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 3DA1569 | NPN Transistor 3DA1569
1
3DA1569 NPN
2
2.1
2.2
TO-220AB
Tamb= 25
-
Ta=25 Tc=25
VCB0 VCE0 VEB0
IC
Ptot
Tj Tstg
300 300 5 0.15 1.5 12.5 150 -55 150
V V V A
W
Tamb= 25
12.5min
16.5max
10.7max
4.8max 1.4max
3.84
6.9max
1.27
1.2max
2.54
2.54
BCE
2.67 0.4max
-
a
ICB0 IEB0
hFEa
VCEsata fT
tp 300 s, Huajing Microelectronics transistor | | |
| 2 | 3DA2073A | SILICON NPN TRANSISTOR 2SC2073A(3DA2073A)
硅 NPN 半导体三极管/SILICON NPN TRANSISTOR
用途:用于功率放大和帧频输出。
Purpose: Power amplifier applications, vertical output applications.
特点:宽阔的安全工作区,于 2SA940A(3CA940A)互补。
Features: Wide Safe Operating Area, complementary to 2  FOSHAN BLUE ROCKET transistor | | |
| 3 | 3DA2092 | Silicon NPN transistor KTD2092(3DA2092)
硅 NPN 半导体三极管/SILICON NPN TRANSISTOR
用途：用于开关、界面电路和驱动电路。
Purpose: Switching application, interface circuit and driver circuit application.
特点：高放大，饱和压降低。
Features: High hFE, low saturation voltage.
极限参  BLUE ROCKET ELECTRONICS transistor | | |
| 4 | 3DA2396 | SILICON NPN TRANSISTOR 2SD2396(3DA2396)
硅 NPN 半导体三极管/SILICON NPN TRANSISTOR
用途: 用于低频率功率放大。
Purpose: Low frequency power amplifier.
特点:直流电流增益高,饱和压降低,集电极耗散功率大,,安全工作区宽。
Features: High DC current gain),low VCE(sat),large collecto FOSHAN BLUE ROCKET transistor | | |
| 5 | 3DA2688 | SILICON NPN TRANSISTOR 2SC2688(3DA2688)
硅 NPN 半导体三极管/SILICON NPN TRANSISTOR
用途:用于彩电色度输出电路。
Purpose: Color TV chroma output circuits.
特点:Cre 小,fT 高。
Features: Low Cre, high fT.
极限参数/Absolute maximum ratings(Ta=25℃)
参数符号
数值
单位
Symbol
Rating
 Foshan Eming Electronics transistor | | |
| 6 | 3DA3807 | NPN Transistor 华晶分立器件
3DA3807
高频放大管壳额定双极型晶体管
1. 概述与特点
3DA3807 硅 NPN 型高频大功率晶体管，适用于彩色电视机开关电源电路。其特点如下： ● 电流增益高
● 反向漏电流小
● 饱和压降低
● 封装形式：TO-126F
2. � Huajing Microelectronics transistor | | |
| 7 | 3DA3807 | SILICON NPN TRANSISTOR 2SC3807(3DA3807)
硅 NPN 半导体三极管/SILION NPN TRANSISTOR
用途:用于低频放大和驱动。
Purpose: low frequency general-purpose amplifiers, drivers.
特点: IC 大, hFE 高,VCE(sat)低,VEBO 高。
Features: Large current capacity, high DC current gain, Low collector-to-emitter satur Foshan Eming Electronics transistor | | |
| 8 | 3DA4002 | NPN Transistor 1
3DA4002(3DA5109) NPN
3DA4002(3DA5109)
2
2.1
2.2
B4(A3-02B)
8.64 9.39
12.5 25.0 6.10 6.60
Tamb= 25
-
Ta=25 Tc=25
VCE0 VCB0 VEB0
IC
Ptot
Tj Tstg
50 65 5 0.4 1.0 3.5 150 -55 150
V V V A
W
Tamb= 25
45
8.01 8.50 EBC
- ICB0 VCB=40V IE=0 0.1 mA
- IEB0 VEB=4V IC=0
0.1 mA
hFE VCE=10V IC=10 Huajing Microelectronics transistor | | |
| 9 | 3DA4014 | NPN Transistor 3DA4014
1
3DA4014 NPN
2
2.1
2.2
TO-3P(N)
Tamb= 25
-
Ta=25 Tc=25
VCB0 VCE0 VEB0
IC
Ptot
Tj Tstg
200 160 5 7 3 80 150 -55 150
V V V A
W
Tamb= 25
-
-
a:
tp 300 s,
ICB0 IEB0 hFEa VCEsata fT 2%
VCB=200V, IE=0 VEB=7V, IC=0
VCE=5V, IC=1A
IC=3A, IB=0.3A VCE=5V, IC=1A f=3MHz
18.3max
5.1 20.3ma Huajing Microelectronics transistor | |
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