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30N45 PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
1 30N45
N-Channel Enhancement Mode MFET

Preliminary Data Sheet MegaMOSTMFET N-Channel Enhancement Mode VDSS IXTH 30N45 450 V IXTH 30N50 500 V ID25 RDS(on) 30 A 0.16 Ω 30 A 0.17 Ω TO-247 AD Symbol VDSS VDGR VGS VGSM ID25 IDM PD TJ TJM T stg TL Md Weight Symbol VDSS VGS(th) IGSS IDSS R DS(on) Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient 30N45

IXYS
IXYS
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30N Data sheets

Part No Description ( Function) Manufacturers PDF
30N60A4D   HGT1N30N60A4D

HGT1N30N60A4D Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGT1N30N60A4D is a MOS gated high voltage switching device combining the best features of a MOSFETs and a bipolar transistor. These devices have the high input impedanc

Fairchild Semiconductor
Fairchild Semiconductor
datasheet pdf
30N45   N-Channel Enhancement Mode MFET

Preliminary Data Sheet MegaMOSTMFET N-Channel Enhancement Mode VDSS IXTH 30N45 450 V IXTH 30N50 500 V ID25 RDS(on) 30 A 0.16 Ω 30 A 0.17 Ω TO-247 AD Symbol VDSS VDGR VGS VGSM ID25 IDM PD TJ TJM T stg TL Md Weight Symbol VDSS VGS(th) IGSS IDSS R DS(on) Test Conditions

IXYS
IXYS
datasheet pdf
30N06   N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 30N06 30 Amps, 60 Volts N-CHANNEL POWER MOSFET 1 MOSFET DESCRIPTION The UTC 30N06 is a low voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance an

UTC
UTC
datasheet pdf


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