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Datasheet 30N Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes PDF
18 30N05   N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 30N05 ·FEATURES ·Drain Current ID= 30A@ TC=25℃ ·Drain Source Voltage- : VDSS= 50V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.05Ω(Max) ·Fast Switching ·APPLICATIONS ·Switching power supplies,conver
Inchange Semiconductor
Inchange Semiconductor
datasheet 30N05 pdf
17 30N06   N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 30N06 ·FEATURES ·Drain Current ID= 30A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.05Ω(Max) ·Fast Switching ·APPLICATIONS ·Switching power supplies,conver
Inchange Semiconductor
Inchange Semiconductor
datasheet 30N06 pdf
16 30N06   N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 30N06 30 Amps, 60 Volts N-CHANNEL POWER MOSFET 1 MOSFET DESCRIPTION The UTC 30N06 is a low voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanch
Unisonic Technologies
Unisonic Technologies
datasheet 30N06 pdf
15 30N06-Q   N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD 30N06-Q Power MOSFET 60V, 30A N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 30N06-Q is a low voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and excellent avalanche character
Unisonic Technologies
Unisonic Technologies
datasheet 30N06-Q pdf


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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

Sanken
Sanken
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