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30J324 PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
1 30J324
GT30J324

GT30J324 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J324 High Power Switching Applications Fast Switching Applications Unit: mm · The 4th generation · Enhancement-mode · Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: tf = 0.05 µs (typ.) Low switching loss: Eon = 1.00 mJ (typ.) : Eoff = 0.80 mJ (typ.) · Low saturat

Toshiba Semiconductor
Toshiba Semiconductor
pdf

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30J3 Data sheets

Part No Description ( Function) Manufacturers PDF
30J324   GT30J324

GT30J324 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J324 High Power Switching Applications Fast Switching Applications Unit: mm · The 4th generation · Enhancement-mode · Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed:

Toshiba Semiconductor
Toshiba Semiconductor
datasheet pdf



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