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Datasheet 30J Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | 30J324 | GT30J324 GT30J324
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT30J324
High Power Switching Applications Fast Switching Applications
Unit: mm
· The 4th generation · Enhancement-mode · Fast switching (FS): Operating frequency up to 50 kHz (reference)
High speed: tf = 0.05 µs (typ.) |
 Toshiba Semiconductor |
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| 1 | 30JL2C41 | SILICON EPITAXIAL TYPE HIGH EFFICIENCY DIODE STACK 30JL2C41
TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE
30JL2C41
SWITCHING MODE POWER SUPPLY APPLICATON CONVERTER & CHOPPER APPLICATION
Unit: mm
! Repetitive Peak Reverse Voltage : VRRM = 600 V ! Average Output Rectified Current : IO = 30 A ! Ultra Fast Reverse-Recovery Time : t |
Toshiba Semiconductor |
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