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Datasheet 2SK65 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 10 | 2SK65 | Silicon N-Channel Junction FET Silicon Junction FETs (Small Signal)
2SK65
Silicon N-Channel Junction FET
For impedance conversion in low frequency For electret capacitor microphone s Features
q Diode is connected between gate and source q Low noise voltage
unit: mm
4.5±0.1 2.0±0.2 1.0
s Absolute Maximum Ratings (Ta = 25°C)
P |
 Panasonic Semiconductor |
 |
| 9 | 2SK65 | Silicon N-Channel Junction FET Silicon Junction FETs (Small Signal)
2SK0065 (2SK65)
Silicon N-Channel Junction FET
For impedance conversion in low frequency For electret capacitor microphone
4.0±0.2 2.0±0.2 (0.8) 3.0±0.2
unit: mm
I Features
G Diode is connected between gate and source G Low noise voltage
I Absolute Maximu |
Panasonic Semiconductor |
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| 8 | 2SK654 | FAST SWITCHING N-CHANNEL SILICON POWER MOSFET |
 NEC |
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| 7 | 2SK655 | Silicon N-Channel MOS FET Silicon MOS FETs (Small Signal)
2SK655
Silicon N-Channel MOS FET
For switching
unit: mm
4.0±0.2
3.0±0.2 0.7±0.1
s Features
q High-speed switching q Allowing to supply with the radial taping
s Absolute Maximum Ratings (Ta = 25°C)
Parameter Drain to Source voltage Gate to Source voltage Drain c |
Panasonic Semiconductor |
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