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Datasheet 2SK43 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 5 | 2SK430 | Silicon N-Channel MOS FET w
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 Hitachi |
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| 4 | 2SK433 | Transistor ISAHAYA ELECTRONICS CORPORATION
ISAHAYA ELECTRONICS CORPORATION
ISAHAYA ELECTRONICS CORPORATION
Marketing division, Marketing planning department
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
Keep safety first in your circuit designs!
·ISAHAYA Electronics Corporation puts the maximum effort in |
 ISAHAYA ELECTRONICS |
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| 3 | 2SK435 | Silicon N-Channel Junction FET 2SK435
Silicon N-Channel Junction FET
Application
Low frequency / High frequency amplifier
Outline
TO-92 (2)
1. Drain 2. Source 3. Gate 3 2 1
2SK435
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Gate current Channel power dissipation Chan |
 Hitachi Semiconductor |
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| 2 | 2SK436 | N-Channel Junction Silicon FET Ordering number:EN1405B
N-Channel Junction Silicon FET
2SK436
High-Frequency, Low-Frequency General-Purpose Amplifier Applications
Applications
Package Dimensions
· AM tuner RF amplifiers and low-noise amplifiers.
unit:mm
Features
· Largeyfs. · Ultralow noise figure. · Small Crss. · |
 Sanyo Semicon Device |
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