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Datasheet 2SK3561 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 6 | 2SK3561 | Silicon N Channel MOS Type Field Effect Transistor 2SK3561
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK3561
Switching Regulator Applications
• Low drain-source ON resistance: RDS (ON) = 0.75 Ω (typ.) • High forward transfer admittance: |Yfs| = 6.5 S (typ.) • Low leakage current: IDSS = 100 μA (VDS = 500 V) • |
 Toshiba |
 |
| 5 | 2SK3561 | Silicon N Channel MOS Type Field Effect Transistor 2SK3561
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK3561
Switching Regulator Applications
• Low drain-source ON resistance: RDS (ON) = 0.75 Ω (typ.) • High forward transfer admittance: |Yfs| = 6.5 S (typ.) • Low leakage current: IDSS = 100 μA (VDS = 500 V) • |
 Toshiba Semiconductor |
|
| 4 | 2SK3561 | Silicon N Channel MOS Type Field Effect Transistor 2SK3561
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK3561
Switching Regulator Applications
• Low drain-source ON resistance: RDS (ON) = 0.75 Ω (typ.) • High forward transfer admittance: |Yfs| = 6.5 S (typ.) • Low leakage current: IDSS = 100 μA (VDS = 500 V) • |
Toshiba Semiconductor |
|
| 3 | 2SK3561 | Silicon N Channel MOS Type Field Effect Transistor 2SK3561
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI)
2SK3561
Switching Regulator Applications
• Low drain-source ON resistance: RDS (ON) = 0.75 Ω (typ.) • High forward transfer admittance: |Yfs| = 6.5 S (typ.) • Low leakage current: IDSS = 100 μA (VDS = 500 V) • |
Toshiba |
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