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2SK3548 PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
134 2SK350
Silicon N-Channel MOSFET

Hitachi
Hitachi
pdf
133 2SK350
N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK350 DESCRIPTION ·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 450V(Min) ·Fast Switching Speed APPLICATIONS ·High speed power Switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 450 V VGS Gate-Source Voltage

Inchange Semiconductor
Inchange Semiconductor
pdf
132 2SK3501-01
N-CHANNEL SILICON POWER MOSFET

2SK3501-01 Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings TO-220AB Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (T

Fuji Electric
Fuji Electric
pdf
131 2SK3502
N CHANNEL SILICON POWER MOSET

2SK3502-01MR Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings TO-220F Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless othe

Fuji Electric
Fuji Electric
pdf
130 2SK3502-01MR
N CHANNEL SILICON POWER MOSET

2SK3502-01MR Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings TO-220F Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25°C unless othe

Fuji Electric
Fuji Electric
pdf
129 2SK3503
N-Channel MOSFET

SMD Type MOSFET N-Channel MOSFET 2SK3503 SOT-523 1.6 +0.1 -0.1 1.0 +0.1 -0.1 0.2 +0.05 -0.05 U nit: m m 0.15±0.05 0.55 (REF.) 0.8±0.1 0.36±0.1 ■ Features ● VDS (V) = 16V ● ID = 100 mA (VGS = 1.5V) ● RDS(ON) < 50Ω (VGS = 1.5V) ● RDS(ON) < 15Ω (VGS = 2.5V) ● RDS(ON) < 12Ω (VGS = 4V) Gate 21 +0.151.6 -0.15 Drain Body Diode 3 0.5 +0.1 -0.1 0.3

Kexin
Kexin
pdf



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