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Datasheet 2SK321 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 14 | 2SK321 | SI N-CHANNEL JUNCTION |
 Panasonic Semiconductor |
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| 13 | 2SK3211 | Silicon N Channel MOS FET 2SK3211(L), 2SK3211(S)
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS = 60 mΩ typ.
• High speed switching • 4 V gate drive device can be driven from 5 V source
REJ03G1091-0400 Rev.4.00
May 15, 2006
Outline
RENESAS Package code: PRSS0004AE-A (Package |
 Renesas |
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| 12 | 2SK3211 | Silicon N Channel MOS FET High Speed Power Switching 2SK3211(L), 2SK3211(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-761A (Z) 2nd. Edition February 1999 Features
• • • Low on-resistance RDS = 60 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source
2SK3211
Outline
LDPAK
4 4
D
1 1
2
3
G
2
|
 Hitachi Semiconductor |
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| 11 | 2SK3211L | Silicon N Channel MOS FET 2SK3211(L), 2SK3211(S)
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS = 60 mΩ typ.
• High speed switching • 4 V gate drive device can be driven from 5 V source
REJ03G1091-0400 Rev.4.00
May 15, 2006
Outline
RENESAS Package code: PRSS0004AE-A (Package |
Renesas |
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