2SK3152 Silicon N Channel MOS FET High Speed Power Switching ADE-208-732 (Z) 1st. Edition February 1999 Features • Low on-resistance R DS = 100 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline TO–220FM D G 1 2 S 1. Gate 2. Drain 3. Source 3 2SK3152 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gat

2SK3152 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =100 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline REJ03G1077-0200 (Previous: ADE-208-732) Rev.2.00 Sep 07, 2005 RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM) D G 1. Gate 2. Drain 3. Source 12 3 S Rev.2.00 Sep