No | Part number | Description ( Function ) | Manufacturers | |
2 | 2SK3151 | Silicon N Channel MOS FET High Speed Power Switching 2SK3151 Silicon N Channel MOS FET High Speed Power Switching ADE-208-747A (Z) 2nd. Edition February 1999 Features • Low on-resistance R DS (on) = 11.5 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline TO–3P D 2 1 G 1 3 S 2 3 1. Gate 2. Drain (Flange) 3. Source 2SK3151 Absolute Maximum Ratings (Ta = 25°C) Item Drain |
Hitachi Semiconductor |
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1 | 2SK3151 | Silicon N Channel MOS FET 2SK3151 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS (on) = 11.5 mΩ typ. • High speed switching • 4 V gate drive device can be driven from 5 V source REJ03G1076-0400 (Previous: ADE-208-747B) Rev.4.00 Sep 07, 2005 Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D 1. Gate G 2. Drain (Flange) 3. Source 1 2 3 S |
Renesas |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |