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Datasheet 2SK3077 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | 2SK3077 | 900 MHz BAND AMPLIFIER APPLICATIONS
2SK3077
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE
2SK3077
900 MHz BAND AMPLIFIER APPLICATIONS (GSM)
Unit: mm l Output Power l Gain l Drain Efficiency : PO = 15.0 dBmW (Min.) : GP = 15.0 dB (Min.) : ηD = 20% (Typ.)
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC D |
 Toshiba Semiconductor |
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| 1 | 2SK3077A | VHF/UHF Band Amplifier Applications
2SK3077A
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK3077A
VHF/UHF Band Amplifier Applications
Unit: mm Output power: Po ≥ 20.5dBmW Gain: Gp ≥ 10.5dB Drain Efficiency: ηD ≥ 50%
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Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage |
Toshiba Semiconductor |
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