| No | Part number | Description ( Function ) | Manufacturers | |
| 10 | 2SK304 | Silicon N Channel Junction FETs Silicon N Channel Junction FETs LH03 series of products interconvertible 2SK304 2SK304 D Symbol Applications For charge sensor, meter amplifier circuit, rheostat , chopper and gain controller for AGC, electronic switch. Electrical characteristics (Ta=25℃) SG Packag 1-Source 2-Gate 3-Drain TO-92 or TO-92s Parameter Drain to Source Voltage Gate to Drain ( Source) Voltage |
 Kesailun Elctronic |
|
| 9 | 2SK304 | Low-Frequency Amp Applications |
 Sanyo Semicon Device |
|
| 8 | 2SK3042 | Silicon N-Channel Power F-MOS FET Power F-MOS FETs 2SK3042 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 45mJ q High-speed switching: tf = 30ns q No secondary breakdown unit: mm 9.9±0.3 4.6±0.2 2.9±0.2 s Applications q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power supply 15.0±0.5 φ3.2±0. |
 Panasonic Semiconductor |
|
| 7 | 2SK3043 | Silicon N-Channel Power F-MOS FET Power F-MOS FETs 2SK3043 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 100mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 35ns q No secondary breakdown unit: mm 9.9±0.3 4.6±0.2 2.9±0.2 s Applications q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power |
Panasonic Semiconductor |
|
| 6 | 2SK3044 | Silicon N-Channel Power F-MOS FET Power F-MOS FETs 2SK3044 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 130mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 50ns q No secondary breakdown unit: mm 9.9±0.3 4.6±0.2 2.9±0.2 s Applications q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power |
Panasonic Semiconductor |
|
| 5 | 2SK3045 | Silicon N-Channel Power F-MOS FET Power F-MOS FETs 2SK3045 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed: EAS > 15.6mJ q VGSS = ±30V guaranteed q High-speed switching: tf = 35ns q No secondary breakdown unit: mm 9.9±0.3 4.6±0.2 2.9±0.2 s Applications q Contactless relay q Diving circuit for a solenoid q Driving circuit for a motor q Control equipment q Switching power |
Panasonic Semiconductor |
|
List of most widely used semiconductors
| Part Number | Function | Manufacturers | |
| 1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
 Vishay |
|
| LM317 | This is a popular adjustable voltage regulator. |
 ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |
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