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2SK2980 PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
1 2SK2980
Silicon N Channel MOS FET High Speed Power Switching

2SK2980 Silicon N Channel MOS FET High Speed Power Switching ADE-208-571B (Z) 3rd. Edition Jun 1998 Features • Low on-resistance R DS(on) = 0. 2 Ω typ. (VGS = 4 V, I D = 500 mA) • 2.5V gate drive devices. • Small package (MPAK) Outline MPAK 3 1 D 2 G 1. Source 2. Gate 3. Drain S 2SK2980 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to s

Hitachi Semiconductor
Hitachi Semiconductor
pdf

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2SK29 Data sheets

Part No Description ( Function) Manufacturers PDF
2SK2996   SILICON N CHANNEL MOS TYPE(HIGH SPEED/ HIGH VOLTAGE SWITCHING APPLICATIONS CHOPPER REGULATOR)

2SK2996 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2996 DC−DC Converter, Relay Drive and Motor Drive Applications z Low drain−source ON resistance z High forward transfer admittance z Low leakage current z Enhancement mode

Toshiba Semiconductor
Toshiba Semiconductor
datasheet pdf
2SK2961   Silicon N Channel MOS Type Field Effect Transistor

2SK2961 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L2−π−MOSV) 2SK2961 Relay Drive, Motor Drive and DC−DC Converter Application Unit: mm z Low drain−source ON resistance : RDS (ON) = 0.2 Ω (typ.) z High forward transfer admittance : |Yfs| = 2.0 S (ty

Toshiba Semiconductor
Toshiba Semiconductor
datasheet pdf
2SK2973   RF POWER MOS FET(VHF/UHF power amplifiers)

MITSUBISHI RF POWER MOS FET 2SK2973 DESCRIPTION 2SK2973 is a MOS FET type transistor specifically designed for VHF/UHF power amplifiers applications. OUTLINE DRAWING 4.6MAX 1.6±0.2 Dimensions in mm 1.5±0.1 FEATURES • High power gain:Gpe≥13dB @VDD=9.6V,f=450MHz,Pin=17d

Mitsubishi Electric Semiconductor
Mitsubishi Electric Semiconductor
datasheet pdf



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