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Datasheet 2SK2955 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
2 | 2SK2955 | Silicon N Channel MOS FET High Speed Power Switching 2SK2955
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-564B (Z) 3rd. Edition Jun 1998 Features
• Low on-resistance R DS =0.010 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source
Outline
TO–3P
D
G
1
S
2
3
1. Gate 2. Drain (Flange) 3. Sou |
Hitachi Semiconductor |
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1 | 2SK2955 | Silicon N Channel MOS FET 2SK2955
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1055-0400 (Previous: ADE-208-564B) Rev.4.00 Sep 07, 2005
Features
• Low on-resistance RDS =0.010 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0004ZE-A |
Renesas |
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Número de pieza | Descripción | Fabricantes | |
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