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Datasheet 2SK2925 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 4 | 2SK2925 | Silicon N Channel MOS FET High Speed Power Switching 2SK2925(L),2SK2925(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-549C (Z) 4th. Edition Jun 1998 Features
• Low on-resistance R DS =0.060 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source
Outline
DPAK–2
4
4
D 1 2 G 3
S
1 2
3
1. Gat |
 Hitachi Semiconductor |
 |
| 3 | 2SK2925L | Silicon N Channel MOS FET High Speed Power Switching 2SK2925(L),2SK2925(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-549C (Z) 4th. Edition Jun 1998 Features
• Low on-resistance R DS =0.060 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source
Outline
DPAK–2
4
4
D 1 2 G 3
S
1 2
3
1. Gat |
Hitachi Semiconductor |
|
| 2 | 2SK2925S | Silicon N Channel MOS FET High Speed Power Switching 2SK2925(L),2SK2925(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-549C (Z) 4th. Edition Jun 1998 Features
• Low on-resistance R DS =0.060 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source
Outline
DPAK–2
4
4
D 1 2 G 3
S
1 2
3
1. Gat |
Hitachi Semiconductor |
|
| 1 | 2SK2925S | N-Channel Silicon MOSFET www.DataSheet.co.kr
SMD Type
N-Channel Silicon MOSFET 2SK2925S
IC MOSFET
Features
Low on-resistance RDS =0.060 typ.
+0.15 6.50-0.15 +0.2 5.30-0.2
TO-252
+0.15 1.50-0.15
+0.1 2.30-0.1 +0.8 0.50-0.7
Unit: mm
High speed switching 4V gate drive device can be driven from 5V source
+0.2 9.70-0.2
+0 |
 Guangdong Kexin Industrial |
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