2SK2788 PDF Datasheet Search Results |
| No | Part number | Description ( Function ) | Manufacturers | |
| 1 | 2SK2788 | Silicon N Channel MOS FET High Speed Power Switching 2SK2788 Silicon N Channel MOS FET High Speed Power Switching ADE-208-538 1st. Edition Features • Low on-resistance R DS(on) = 0.12Ω typ (VGS = 10 V, I D = 1 A) • Low drive current • High speed switching • 4V gate drive devices. Outline UPAK 3 D 2 1 4 G 1. Gate 2. Drain 3. Source 4. Drain S 2SK2788 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source volt |
 Hitachi Semiconductor |
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The datasheet is usually used for technical communication to describe technical characteristics of an item or product. |
2SK27 Data sheets |
| Part No | Description ( Function) | Manufacturers | |
| 2SK2750 | N CHANNEL MOS TYPE (HIGH SPEED/ HIGH VOLTAGE SWITCHING/ CHOPPER REGULATOR/ DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS) 2SK2750 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2750 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance z High forward transfer admittance : RDS (ON) = 1.7 Ω (typ.) : |Yfs| = 3.0 S (typ.) Unit: |
 Toshiba Semiconductor |
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| 2SK2717 | Silicon N Channel MOS Type Field Effect Transistor 2SK2717 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) 2SK2717 DC−DC Converter and Motor Drive Applications Unit: mm l Low drain−source ON resistance : RDS (ON) = 2.3 Ω (typ.) l High forward transfer admittance : |Yfs| = 4.4 S (typ.) l Low lea |
Toshiba Semiconductor |
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| 2SK2765 | N-channel MOS-FET 2SK2765-01 FAP-IIS Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated N-channel MOS-FET 800V 2Ω 7A 125W > Outline Drawing > Applications Switching Regulators UPS |
 Fuji Electric |
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