No | Part number | Description ( Function ) | Manufacturers | |
2 | 2SK2645 | N-channel MOS-FET 2SK2645-01MR FAP-IIS Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated N-channel MOS-FET 600V 1,2Ω 9A 50W > Outline Drawing > Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics - Absolut |
![]() Fuji Electric |
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1 | 2SK2645-01MR | N-channel MOS-FET 2SK2645-01MR FAP-IIS Series > Features High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated N-channel MOS-FET 600V 1,2Ω 9A 50W > Outline Drawing > Applications Switching Regulators UPS DC-DC converters General Purpose Power Amplifier > Maximum Ratings and Characteristics - Absolut |
![]() Fuji Electric |
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List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
![]() Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
![]() ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |