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Datasheet 2SK2611 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
2 | 2SK2611 | N CHANNEL MOS TYPE (HIGH SPEED/ HIGH VOLTAGE SWITCHING/ DC-DC CONVERTER/ RELAY DRIVE AND MOTOR DRIVE APPLICATIONS) 2SK2611
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII)
2SK2611
DC−DC Converter, Relay Drive and Motor Drive Applications
z Low drain−source ON-resistance z High forward transfer admittance z Low leakage current z Enhancement−mode : RDS (ON) = 1.2 Ω (typ.) : |Yfs| = |
Toshiba Semiconductor |
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1 | 2SK2611 | Silicon N-Channel MOSFET www.DataSheet.in
2SK2611
Silicon N-Channel MOSFET
Features
� � � � � 11A,500V,RDS(on)(Max0.55Ω)@VGS=10V Ultra-low Gate charge(Typical 43nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using |
WINSEMI SEMICONDUCTOR |
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Número de pieza | Descripción | Fabricantes | |
SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
Sanken |
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