No | Part number | Description ( Function ) | Manufacturers | |
2 | 2SK2570 | Silicon N-Channel MOS FET Low Frequency Power Switching 2SK2570 Silicon N-Channel MOS FET Low Frequency Power Switching ADE-208-574 1st. Edition Features • Low on-resistance R DS(on) = 0. 8 Ω typ. (VGS = 4 V, I D = 100 mA) • 2.5V gate drive devices. • Small package (MPAK) Outline MPAK 3 1 2 D G 1. Source 2. Gate 3. Drain S 2SK2570 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage |
Hitachi Semiconductor |
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1 | 2SK2570 | Silicon N Channel MOS FET 2SK2570 Silicon N Channel MOS FET Low Frequency Power Switching REJ03G1019-0200 (Previous: ADE-208-574) Rev.2.00 Sep 07, 2005 Features • Low on-resistance RDS(on) = 0.8 Ω typ. (VGS = 4 V, ID = 100 mA) • 2.5 V gate drive devices. • Small package (MPAK) Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) D 3 1 2 G 1. Source 2. Gate 3. Drain S Note: Markin |
Renesas |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
|
LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
|
6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |