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Datasheet 2SK246 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 10 | 2SK246 | Silicon N Channel Junction Type Transistor TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK246
For Constant Current, Impedance Converter and DC-AC High Input Impedance Amplifier Circuit Applications
2SK246
Unit: mm
· High breakdown voltage: VGDS = −50 V · High input impedance: IGSS = −1 nA (max) (VGS = −30 V)
Ma |
 Toshiba Semiconductor |
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| 9 | 2SK246 | N-CHANNEL JUNCTION TYPE Field Effect Transistor TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK246
For Constant Current, Impedance Converter and DC-AC High Input Impedance Amplifier Circuit Applications
2SK246
Unit: mm
· High breakdown voltage: VGDS = −50 V · High input impedance: IGSS = −1 nA (max) (VGS = −30 V)
Ma |
Toshiba Semiconductor |
|
| 8 | 2SK2461 | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2461
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK2461 is N-Channel MOS Field Effect Transistor designed for high speed switching applications.
PACKAGE DIMENSIONS
(in millimeters)
10.0 ±0.3 4.5 ±0.2 3.2 ±0.2 2.7 ±0.2
FEATURES
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 NEC |
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| 7 | 2SK2462 | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2462
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK2462 is N-Channel MOS Field Effect Transistor designed for high current switching applications. PACKAGE DIMENSIONS
(in millimeters) 10.0 ±0.3 4.5 ±0.2 3.2 ±0.2 2.7 ±0.2
FEATURES |
NEC |
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