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Datasheet 2SK241 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 14 | 2SK241 | Silicon N Channel MOS Type Field Effect Transistor TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK241
2SK241
FM Tuner, VHF and RF Amplifier Applications
Unit: mm
• Low reverse transfer capacitance: Crss = 0.035 pF (typ.) • Low noise figure: NF = 1.7dB (typ.) • High power gain: GPS = 28dB (typ.) • Recommend operation voltag |
 Toshiba Semiconductor |
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| 13 | 2SK2410 | SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2410
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK2410 is N-Channel MOS Field Effect Transistor designed for high speed switching applications. PACKAGE DIMENSIONS
(in millimeters) 10.0 ±0.3 4.5 ±0.2 3.2 ±0.2 2.7 ±0.2
FEATURES
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 NEC |
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| 12 | 2SK2411 | Switching N-Channel Power MOS FET DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2411, 2SK2411-Z
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK2411 is N-Channel MOS Field Effect Transistor designed for high speed switching applications.
3.0 ±0.3
PACKAGE DIMENSIONS
(in millimeter) 10.6 MAX. 10.0
5.9 MIN. 12.7 MI |
 NEC Electronics |
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| 11 | 2SK2411-Z | Switching N-Channel Power MOS FET DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK2411, 2SK2411-Z
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK2411 is N-Channel MOS Field Effect Transistor designed for high speed switching applications.
3.0 ±0.3
PACKAGE DIMENSIONS
(in millimeter) 10.6 MAX. 10.0
5.9 MIN. 12.7 MI |
NEC Electronics |
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| Número de pieza | Descripción | Fabricantes | |
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