No | Part number | Description ( Function ) | Manufacturers | |
3 | 2SK2225 | Silicon N-Channel MOS FET 2SK2225 Silicon N-Channel MOS FET ADE-208-140 1st. Edition Application High speed power switching Features • • • • • High breakdown voltage (VDSS = 1500 V) High speed switching Low drive current No Secondary Breakdown Suitable for Switching regulator, DC-DC converter Outline TO-3PFM D G 1 2 3 S 1. Gate 2. Drain 3. Source 2SK2225 Absolute Maximum Ratings (T |
Hitachi Semiconductor |
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2 | 2SK2225 | Silicon N Channel MOS FET 2SK2225 Silicon N Channel MOS FET REJ03G1005-0200 (Previous: ADE-208-140) Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • • High breakdown voltage (VDSS = 1500 V) High speed switching Low drive current No Secondary breakdown Suitable for switching regulator, DC-DC converter Outline RENESAS Package code: PRSS0003ZA- |
Renesas Technology |
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1 | 2SK2225-80-E | High Speed Power Switching MOS FET 2SK2225-80-E 1500V - 2A - MOS FET High Speed Power Switching Features High breakdown voltage (VDSS = 1500 V) High speed switching Low drive current Outline RENESAS Package code: PRSS0003ZD-A (Package name: TO-3PF) D Data Sheet R07DS1275EJ0100 Rev.1.00 Jun 22, 2015 1 2 3 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Dra |
Renesas |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |