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2SK2114 PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
3 2SK2114
Silicon N-Channel MOS FET

2SK2114, 2SK2115 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for Switching regulator Outline TO-220CFM D G 12 3 1. Gate 2. Drain 3. Source S 2SK2114, 2SK2115 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage 2SK2114

Hitachi Semiconductor
Hitachi Semiconductor
pdf
2 2SK2114
Silicon N Channel MOS FET

2SK2114 Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for Switching regulator Outline REJ03G0998-0200 (Previous: ADE-208-1346) Rev.2.00 Sep 07, 2005 RENESAS Package code: PRSS0003AE-A (Package name: TO-220C•FM) D G 1. Gate 2. Drain 3. S

Renesas
Renesas
pdf
1 2SK2114
N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 450V(Min) ·Fast Switching Speed APPLICATIONS ·Switching regulators isc Product Specification 2SK2114 ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) VGS Gate-Source Voltage ID Drain Curren

Inchange Semiconductor
Inchange Semiconductor
pdf


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