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Datasheet 2SK2019-01 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | 2SK2019-01 | N-Channel MOSFET Transistor INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK2019-01
DESCRIPTION ·Drain Current –ID= 3.5A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 500V(Min) ·Fast Switching Speed
APPLICATIONS ·Switching regulators ·UPS ·DC-DC converters ·General purpose power ampli |
 Inchange Semiconductor |
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| 1 | 2SK2019-01 | N-channel MOS-FET 2SK2019-01
FAP-IIA Series
> Features
High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof
N-channel MOS-FET
500V
3Ω
3,5A
40W
> Outline Drawing
> Applications
Switching Regulators UPS DC-DC converters General Purpo |
 Fuji Electric |
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nuevas actualizaciones
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| SPS122 | Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use. |
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