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2SK1947 Datasheet PDF Search Results

No Part number Description ( Function ) Manufacturers PDF
2 2SK1947
Silicon N-Channel MOS FET

2SK1947 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low Drive Current Built-In Fast Recovery Diode (trr = 140 ns) Suitable for Switching regulator, Motor Control Outline TO-3PL D G 1 2 3 S 1. Gate 2. Drain (Flange) 3. Source 2SK1947 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25 °C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1

Hitachi Semiconductor - 2SK1947 pdf datasheet
Hitachi Semiconductor
2SK1947 datasheet pdf
1 2SK1947
Silicon N Channel MOS FET

2SK1947 Silicon N Channel MOS FET REJ03G0986-0200 (Previous: ADE-208-1334) Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current Built-in fast recovery diode (trr = 140 ns) Suitable for switching regulator, motor control Outline RENESAS Package code: PRSS0004ZF-A (Package name: TO-3PL) D G 1. Gate 2. Drain (Flange) 3. Source S 2 3 1 Rev.2.00 Sep 07, 2005 page 1 of 6 Free Datasheet http:// / 2SK1947 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain cu

Renesas - 2SK1947 pdf datasheet
Renesas
2SK1947 datasheet pdf


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