No | Part number | Description ( Function ) | Manufacturers | |
3 | 2SK1933 | Silicon N-Channel MOS FET 2SK1933 Silicon N-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching No secondary breakdown Suitable for Switching regulator Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1933 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain |
Hitachi Semiconductor |
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2 | 2SK1933 | Silicon N Channel MOS FET 2SK1933 Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • No secondary breakdown • Suitable for switching regulator Outline REJ03G0984-0300 (Previous: ADE-208-1332) Rev.3.00 Apr 27, 2006 RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D 1 2 3 G S 1. Gate 2. Drain (Flange) 3. Source Rev. |
Renesas |
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1 | 2SK1933 | N-Channel MOSFET Transistor INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK1933 DESCRIPTION ·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Fast Switching Speed APPLICATIONS ·Suitable for switching regulator ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 900 V VGS Gate-Source Volt |
Inchange Semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |