No | Part number | Description ( Function ) | Manufacturers | |
3 | 2SK1807 | Silicon N-Channel MOS FET 2SK1807 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter Outline TO-220AB D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1807 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage |
Hitachi Semiconductor |
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2 | 2SK1807 | Silicon N Channel MOS FET 2SK1807 Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No secondary breakdown • Suitable for switching regulator, DC-DC converter Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) G 123 REJ03G0974-0200 (Previous: ADE-208-1321) Rev.2.00 Sep 07, 2005 D 1. Gate |
Renesas |
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1 | 2SK1807 | N-Channel MOSFET Transistor INCHANGE Semiconductor isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current ID= 4A@ TC=25℃ ·Drain Source Voltage : VDSS= 900V(Min) ·Fast Switching Speed isc Product Specification 2SK1807 APPLICATIONS ·High Breakdown Voltage ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 900 V VGS Gate-Source Voltage ±30 |
Inchange Semiconductor |
List of most widely used semiconductors
Part Number | Function | Manufacturers | |
1N4007 | The 1N4007 is a rectification diode that is designed for high-voltage applications, typically up to 1000V. It has a maximum current rating of 1A and a forward voltage drop of around 0.7V. |
Vishay |
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LM317 | This is a popular adjustable voltage regulator. |
ON Semiconductor |
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6N137 | LM393 | 2N3906 | 2N2222 | TIP120 | 1N5818 | LM324N | A1015 | SMAJ20CA |