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Datasheet 2SK176 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 10 | 2SK176 | Silicon N-Channel MOS FET 2SK1761
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter
Outline
TO-220AB
D G
1
2
3 1. Gate 2. Drain (Flange) 3. Sourc |
 Hitachi Semiconductor |
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| 9 | 2SK1760 | MOS Field Effect Power Transistor http://
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 Renesas |
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| 8 | 2SK1761 | Silicon N-Channel MOS FET 2SK1761
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter
Outline
TO-220AB
D G
1
2
3 1. Gate 2. Drain (Flange) 3. Sourc |
Hitachi Semiconductor |
|
| 7 | 2SK1762 | Silicon N-Channel MOS FET 2SK1762
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switchingregulator, DC-DC converter
Outline
TO-220FM
D G
1
2 3
1. Gate 2. Drain 3. Source
S
2SK |
Hitachi Semiconductor |
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