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2SK1341 PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
3 2SK1341
Silicon N-Channel MOS FET

2SK1341 Silicon N Channel MOS FET REJ03G0938-0200 (Previous: ADE-208-1278) Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D G 1. Gate 2.

Renesas
Renesas
pdf
2 2SK1341
Silicon N-Channel MOS FET

2SK1341 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1341 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage G

Hitachi Semiconductor
Hitachi Semiconductor
pdf
1 2SK1341
N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK1341 DESCRIPTION ·Drain Current –ID= 6A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Fast Switching Speed APPLICATIONS ·Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source V

Inchange Semiconductor
Inchange Semiconductor
pdf



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