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2SK134 PDF Datasheet Search Results

No Part number Description ( Function ) Manufacturers PDF
11 2SK134
LOW FREQUENCY POWER AMPLIFIER

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

Hitachi Semiconductor
Hitachi Semiconductor
pdf
10 2SK1340
Silicon N-Channel MOS FET

2SK1340 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1340 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage G

Hitachi Semiconductor
Hitachi Semiconductor
pdf
9 2SK1340
N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK1340 DESCRIPTION ·Drain Current –ID= 5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Fast Switching Speed APPLICATIONS ·Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source V

Inchange Semiconductor
Inchange Semiconductor
pdf
8 2SK1341
Silicon N-Channel MOS FET

2SK1341 Silicon N Channel MOS FET REJ03G0938-0200 (Previous: ADE-208-1278) Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D G 1. Gate 2.

Renesas
Renesas
pdf
7 2SK1341
Silicon N-Channel MOS FET

2SK1341 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1341 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage G

Hitachi Semiconductor
Hitachi Semiconductor
pdf
6 2SK1341
N-Channel MOSFET Transistor

INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK1341 DESCRIPTION ·Drain Current –ID= 6A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Fast Switching Speed APPLICATIONS ·Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Source V

Inchange Semiconductor
Inchange Semiconductor
pdf



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